IRLR024N

Power MOSFET

International Rectifier

IRLR024N Features

* evices Fig 14. For N-Channel HEXFET® MOSFETs www.irf.com 7 IRLR/U024N D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1

IRLR024N General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro.

IRLR024N Datasheet (162.21 KB)

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IRLR024N

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International Rectifier

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162.21 KB

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Power mosfet.
PD- 91363E IRLR024N IRLU024N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Proc.

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IRLR024N Power MOSFET International Rectifier

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IRLR024N Features

IRLR024N General Description

Datasheet Details

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