IRLR024NPBF Datasheet, mosfet equivalent, International Rectifier

IRLR024NPBF Features

• Mosfet 20 0 VDD = 25V 25 50 75 100 125 150 A 175 V(BR)DSS tp Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Induct

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IRLR024NPBF

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International Rectifier

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📄 Datasheet

Description:

Hexfet power mosfet. Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest poss

IRLR024NPBF Application

• Applications The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU

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IRLR024NPBF

International Rectifier

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