IRLR120N - Power MOSFET
IRLR120N Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 100V
* Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on)
