IRLR120N Datasheet - Fairchild Semiconductor

IRLR120N Power MOSFET

IRLR120N Features

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 10µA (Max.) @ VDS = 100V

* Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on)

Datasheet Details

IRLR120N

Fairchild Semiconductor

226.14 KB

Power mosfet.

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IRLR120N Power MOSFET Fairchild Semiconductor

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