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IRLR120N - Power MOSFET

IRLR120N Description

$GYDQFHG 3RZHU 026)(7 IRLR120N .

IRLR120N Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 100V
* Lower RDS(ON): 0.176Ω (Typ. ) BVDSS = 100 V RDS(on)

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Power MOSFET Fairchild Semiconductor
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