IRLR120NPBF Datasheet - International Rectifier

IRLR120NPBF Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLR120NPBF Features

* D.U.T.

* ISD controlled by Duty Factor "D"

* D.U.T. - Device Under Test + - VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied

IRLR120NPBF Datasheet (281.25 KB)

IRLR120NPBF Datasheet Preview — Preview of IRLR120NPBF PDF

Datasheet Details

Part number:

IRLR120NPBF

Manufacturer:

International Rectifier

File Size:

281.25 KB

Description:

Power mosfet.

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IRLR120NPBF Power MOSFET International Rectifier

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