IRLR014N Datasheet - International Rectifier

HEXFET Power MOSFET

IRLR014N Features

* 42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDE

IRLR014N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRLR014N Datasheet (135.38 KB)

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IRLR014N

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International Rectifier

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135.38 KB

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Hexfet power mosfet.
www.DataSheet.in PD- 94350 IRLR/U014N HEXFET® Power MOSFET Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process.

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IRLR014N HEXFET Power MOSFET International Rectifier

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IRLR014N Features

IRLR014N General Description

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