R2K Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.3 Final Power Man

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RoHS ASPC80 Power Shielded Inductors Inches (mm) Dimensions: 1.00 Max (25.4) 20 AWG/TCW 100K 0.550 Max (13.97) 1.15 Nominal (29.21) Features • Ma

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IPD50R2K0CE, IPU50R2K0CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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*RoHS COMPLIANT Features ■ Formerly model ■ Current rating up to 10 A ■ Inductance range: 1 µH to 100,000 µH ■ RoHS compliant* This series is c

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RoHS Axial Coated Inductors AC30 Dimensions: Inches (mm) 24AWG 1.15 NOMINAL (29) 0.394 MAX. (10.01) 1.15 NOMINAL (29) Allied Part Number Indu

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Silicon N-Channel Power MOSFET HPA650R2K8DN ○R General Description： HPA650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPU650R2K8DN ○R General Description： HPU650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPU600R2K3DP ○R General Description： HPU600R2K3DP, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Prelimitary specification UR2KB005-UR2KB100 Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers D3K Features — UL Recoganized — Glass passivate

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RoHS ASPC80 Power Shielded Inductors Inches (mm) Dimensions: 1.00 Max (25.4) 20 AWG/TCW 100K 0.550 Max (13.97) 1.15 Nominal (29.21) Features • Ma

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*RoHS COMPLIANT Features ■ Current rating up to 1.2 A ■ Dielectric strength: 500 VRMS ■ RoHS compliant* Applications ■ DC/DC converters ■ Power supp

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Silicon N-Channel Power MOSFET HPU600R2K3DN ○R General Description： HPU600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.2 Final Indu

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IPD70R2K0CE MOSFET 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

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R2KN VRM : 140 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * * * * * High current capability High surge current capability High reliability Low revers

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RoHS Axial Coated Inductors AC30 Dimensions: Inches (mm) 24AWG 1.15 NOMINAL (29) 0.394 MAX. (10.01) 1.15 NOMINAL (29) Allied Part Number Indu

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