R2K VRM : 150 Volts IZSM : 1.0 Amp. ( 100 µs ) FE.
EIC
R2KS - Avalanche Diode
R2KS V RM : 145 Volts IZSM : 1.0 Amp. ( 100 µ s ) FEATURES : * * * * * High current capability High surge current capability High reliability Low reve.
EIC
R2KN - Avalanche Diode
R2KN VRM : 140 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * * * * * High current capability High surge current capability High reliability Low revers.
EIC Semiconductor Inc
R2KY - Avalanche Diode
R2KY VRM : 120 Volts IZSM : 2.0 Amp. ( 100 µ s ) FEATURES : * * * * * High current capability High surge current capability High reliability Low rever.
EIC
R2K - AVALANCHE DIODE
R2K VRM : 150 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * High current capability * High surge current capability * High reliability * Low reverse c.
Infineon
IPSA70R2K0CE - MOSFET
IPSA70R2K0CE MOSFET 700VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtoth.
Infineon
IPS70R2K0CE - MOSFET
IPS70R2K0CE MOSFET 700VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothe.
Maple Semiconductor
SLD65R2K6SJ - N-Channel MOSFET
SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi.
Maple Semiconductor
SLU65R2K6SJ - N-Channel MOSFET
SLD65R2K6SJ / SLU65R2K6SJ SLD65R2K6SJ / SLU65R2K6SJ 650V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi.
Maple Semiconductor
SLD60R2K3SJ - N-Channel MOSFET
SLD60R2K3SJ / SLU60R2K3SJ SLD60R2K3SJ / SLU60R2K3SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi.
Maple Semiconductor
SLU60R2K3SJ - N-Channel MOSFET
SLD60R2K3SJ / SLU60R2K3SJ SLD60R2K3SJ / SLU60R2K3SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi.
Truesemi
TSD65R2K3S1 - N-Channel MOSFET
TSD65R2K3S1/TSU65R2K3S1 650V 2.1A N-Channel SJ-MOSFET TSD65R2K3S1/TSU65R2K3S1 650V 2.1A N-Channel SJ-MOSFET General Description Features Truesemi .
Truesemi
TSU65R2K3S1 - N-Channel MOSFET
TSD65R2K3S1/TSU65R2K3S1 650V 2.1A N-Channel SJ-MOSFET TSD65R2K3S1/TSU65R2K3S1 650V 2.1A N-Channel SJ-MOSFET General Description Features Truesemi .
Truesemi
TSU70R2K4S1 - N-Channel MOSFET
TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-MOSFET TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-MOSFET General Description Features Truesemi SJ-F.
Truesemi
TSD70R2K4S1 - N-Channel MOSFET
TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-MOSFET TSD70R2K4S1/TSU70R2K4S1 700V 2A N-Channel SJ-MOSFET General Description Features Truesemi SJ-F.
Infineon
lPD60R2KOC6 - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor lPD60R2KOC6 DataSheet Rev.2.1 Final Indu.
Infineon
IPU80R2K8CE - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R2K8CE DataSheet Rev.2.3 Final PowerMan.
Infineon
IPD80R2K8CE - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R2K8CE DataSheet Rev.2.3 Final PowerMan.
ETC
LA4S-8R2K - Power Line Chokes
LA4S Power Line Chokes .60" max 20 AWG/TCW .290" max 1.5" nominal Dimensions include shrink tubing INDUCTANCES 3.9µH to 18,000µH OPERATING TEMPE.
Truesemi
TSP60R2K3S1 - N-Channel MOSFET
TSP60R2K3S1 600V 2.3A N-Channel SJ-MOSFET TSP60R2K3S1 600V 2.3A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high vo.
Truesemi
TSD60R2K3S1 - N-Channel MOSFET
TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET General Description Features Truesemi .
