R2K Datasheet | Specifications & PDF Download

RoHS Axial Molded Inductors AM20 Dimensions: Inches (mm) 24 AWG 0.095±0.01 (2.41±0.25) 1.15 nominal (29) 0.250±0.01 (6.35±0.25) 1.15 nominal (2

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RoHS Axial Coated Inductors AC30 Dimensions: Inches (mm) 24AWG 1.15 NOMINAL (29) 0.394 MAX. (10.01) 1.15 NOMINAL (29) Allied Part Number Indu

Rating: 1 ★ (8 votes)

RoHS Axial Molded Inductors AM20 Dimensions: Inches (mm) 24 AWG 0.095±0.01 (2.41±0.25) 1.15 nominal (29) 0.250±0.01 (6.35±0.25) 1.15 nominal (2

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R2KS V RM : 145 Volts IZSM : 1.0 Amp. ( 100 µ s ) FEATURES : * * * * * High current capability High surge current capability High reliability Low reve

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Dual Slope 16K/8K/4K ASSP MCU for Body Fat Scale HT45R2K-C HT45R2K-B HT45R2K-A Revision: 1.40 Date: �M�a�r�c�h�1��2,���2�0�1�5 HT45R2K-C/-B/-A Dual S

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Dual Slope 16K/8K/4K ASSP MCU for Body Fat Scale HT45R2K-C HT45R2K-B HT45R2K-A Revision: 1.40 Date: �M�a�r�c�h�1��2,���2�0�1�5 HT45R2K-C/-B/-A Dual S

Rating: 1 ★ (6 votes)

Dual Slope 16K/8K/4K ASSP MCU for Body Fat Scale HT45R2K-C HT45R2K-B HT45R2K-A Revision: 1.40 Date: �M�a�r�c�h�1��2,���2�0�1�5 HT45R2K-C/-B/-A Dual S

Rating: 1 ★ (5 votes)

Silicon N-Channel Power MOSFET HPA650R2K8DN ○R General Description： HPA650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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AC20 Axial Coated Inductors RoHS 24 AWG Dimensions: Inches (mm) 1.15 (29) NOMINAL 0.276 (7.01) MAX. 1.15 (29) NOMINAL 0.118 (3.00) MAX. Fe

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LA4S Power Line Chokes .60 max 20 AWG/TCW .290 max 1.5 nominal Dimensions include shrink tubing INDUCTANCES 3.9µH to 18,000µH OPERATING TEMPE

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.2 Final Indu

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IPN60R2K1CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

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RoHS Axial Coated Inductors AC30 Dimensions: Inches (mm) 24AWG 1.15 NOMINAL (29) 0.394 MAX. (10.01) 1.15 NOMINAL (29) Allied Part Number Indu

Rating: 1 ★ (5 votes)

www.DataSheet4U.net SPECIFICATION FOR APPROVAL REF : 20080714-B PROD. NAME ABC'S DWG NO. AA0410□□□□L□-□□□ PAGE: 1 AXIAL INDUCTOR ABC'S ITEM NO. Ⅰ﹒C

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V CoolMOS™ C6 Power Transistor IPL60R2K1C6S Data Sheet Rev. 2.0 Final Power Ma

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche

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Dual Slope 16K/8K/4K ASSP MCU for Body Fat Scale HT45R2K-C HT45R2K-B HT45R2K-A Revision: 1.40 Date: �M�a�r�c�h�1��2,���2�0�1�5 HT45R2K-C/-B/-A Dual S

Rating: 1 ★ (4 votes)

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 GR2A - GR2M PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * Glass passivated ch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.3 Final Power Man

Rating: 1 ★ (4 votes)