R2K Datasheet | Specifications & PDF Download

NCE65R2K2K Power MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.8 48

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GR2AA thru GR2MA Surface Mount Glass Passivated Fast Recovery Rectifier Reverse Voltage 50~1000V Forward Current 2.0A Features • Glass passivated Fas

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R2KY VRM : 120 Volts IZSM : 2.0 Amp. ( 100 µ s ) FEATURES : * * * * * High current capability High surge current capability High reliability Low rever

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NCE65R2K4K Power MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.8 48

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NCE65R2K2I，NCE65R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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NCE65R2K2I，NCE65R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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R2KN VRM : 140 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * * * * * High current capability High surge current capability High reliability Low revers

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IPS60R2K1CE MOSFET 600V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Indu

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Inductors (Coils) > Chip Inductor (Chip Coil) > for General Use Wire Wound Type Data Sheet 1 Chip Inductor (Chip Coil) I Dimensions 2.3±0.2 1.6±0.2

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NCE60R2K2I，NCE60R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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R2KS V RM : 145 Volts IZSM : 1.0 Amp. ( 100 µ s ) FEATURES : * * * * * High current capability High surge current capability High reliability Low reve

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Spec Sheet INDUCTORS Multilayer Chip Inductors (LK series) LK16082R2K-T Features Item Summary 2.2μH(±10%), 30mA, 0603 Lifecycle Stage Mass Productio

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IPD50R2K0CE, IPU50R2K0CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc

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NCE60R2K2I，NCE60R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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R2K VRM : 150 Volts IZSM : 1.0 Amp. ( 100 µs ) FEATURES : * High current capability * High surge current capability * High reliability * Low reverse c

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NCE70R2K2I，NCE70R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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NCE70R2K2I，NCE70R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and d

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