R6009JND3 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6009JND3 FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Res

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R6009JND3 　　Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistan

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