isc N-Channel MOSFET Transistor R6009JNJ FEATURE.
ROHM
R6009JNJ - Power MOSFET
R6009JNJ Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistanc.
INCHANGE
R6009JNJ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6009JNJ FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resi.