R6509ENJ Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor R6509ENJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res

Rating: 1 ★ (5 votes)

R6509ENJ 　　Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel

Rating: 1 ★ (4 votes)