isc N-Channel MOSFET Transistor R6509ENJ FEATURE.
ROHM
R6509ENJ - Power MOSFET
R6509ENJ Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel.
INCHANGE
R6509ENJ - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6509ENJ FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Res.
