SUN HOLD ELECTRIC
RAS-1210 - RELAY
RELAY SPECIFICATIONS
TYPE : RAS-1210 FT
1. Dimensions
Drawing No. RAS-106FT
2. Coil Data
2-1. Normal voltage
12VDC
2-2. Coil resistance
400±40
(14 views)
Winbond
W27C010 - 128K x 8 ELECTRICALLY ERASABLE EPROM
W27C010
128K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27C010 is a high speed, low power Electrically Erasable and Programmable Read
(12 views)
Advanced Micro Devices
AM28F010 - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
FINAL
Am28F010
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s High performance — 70 ns maximum acces
(8 views)
SUN HOLD ELECTRIC
RAS-12-10-M - RELAY
RAS SERIES
RAS
0.5 5 15.0 0.3
19.2 0.2
15.4 0.2
12
12.3 2
(8 views)
SUN HOLD ELECTRIC
RAS-12-10-A - RELAY
RAS SERIES
RAS
0.5 5 15.0 0.3
19.2 0.2
15.4 0.2
12
12.3 2
(8 views)
ATMEL
27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800
Features
• • • • •
Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera
(6 views)
ICT
PEEL20CG10-12 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
www.DataSheet4U.com
(6 views)
ETC
CAT93C46P - C-MOS 1024(64x16/128x8)BIT ELECTRICALLY ERASABLE PROM
**********
CAT93C46P IL08
C-MOS 1024(64x16/128x8)BIT ELECTRICALLY ERASABLE PROM
- TOP VIEW -
CS IN 1 SK IN 2 DI IN 3 DOOUT 4
V DD(+5V) 8 NC 7
ORG
(6 views)
Advanced Micro Devices
Am28F010A - 1 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL
Am28F010A
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
DISTINCTIVE CHARACTERISTICS
s High perfor
(5 views)
Mitsubishi
M5M27C202JK-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
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Mitsubishi
M5M27C202K-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
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Mitsubishi
M5M29FB800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD
(5 views)
Mitsubishi
M5M29FT800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD
(5 views)
ATMEL Corporation
AT27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800
Features
• • • • •
Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera
(4 views)
Winbond
W27E010 - 128K x 8 ELECTRICALLY ERASABLE EPROM
W27E010
128K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27E010 is a high speed, low power Electrically Erasable and Programmable Read
(4 views)
ICT
PEEL20CG10-15 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
www.DataSheet4U.com
(4 views)
SUN HOLD ELECTRIC
RAS-12-10-B - RELAY
RAS SERIES
RAS
0.5 5 15.0 0.3
19.2 0.2
15.4 0.2
12
12.3 2
(3 views)
Winbond
W27L010 - 128K 8 ELECTRICALLY ERASABLE EPROM
Preliminary W27L010 128K × 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27L010 is a high speed, low power consumption Electrically Erasable
(3 views)
