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RAS-12-10-M Datasheet, Features, Application

RAS-12-10-M RELAY

RAS SERIES RAS 0.5 5 15.0 0.3 19.2 0.2 15.4 0..

SUN HOLD ELECTRIC
rating-1 36

RAS-1210 - RELAY

ETC
rating-1 9

CAT93C46P - C-MOS 1024(64x16/128x8)BIT ELECTRICALLY ERASABLE PROM

Advanced Micro Devices
rating-1 8

AM28F010 - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory

Advanced Micro Devices
rating-1 5

Am28F010A - 1 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory

SUN HOLD ELECTRIC
rating-1 5

RAS-12-10-B - RELAY

ATMEL Corporation
rating-1 5

AT27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM

Winbond
rating-1 5

W27L010 - 128K 8 ELECTRICALLY ERASABLE EPROM

ATMEL
rating-1 5

27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM

SUN HOLD ELECTRIC
rating-1 4

RAS-12-10-M - RELAY

SUN HOLD ELECTRIC
rating-1 4

RAS-12-10-A - RELAY

Mitsubishi
rating-1 4

M5M27C202K-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

Mitsubishi
rating-1 4

M5M29FT800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

ICT
rating-1 4

PEEL20CG10-12 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device

Winbond
rating-1 3

W27C010 - 128K x 8 ELECTRICALLY ERASABLE EPROM

Winbond
rating-1 3

W27E010 - 128K x 8 ELECTRICALLY ERASABLE EPROM

ICT
rating-1 3

PEEL20CG10-15 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device

Mitsubishi
rating-1 1

M5M27C202JK-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

Mitsubishi
rating-1 1

M5M29FB800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

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