RD3.0S Datasheet | Specifications & PDF Download

RD3H080SP 　　Pch -45V -8A Power MOSFET 　　 Datasheet lOutline VDSS -45V 　 RDS(on)(Max.) 91mΩ DPAK ID ±8A TO-252 PD 15W 　 　　　　　　 lFeature

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Isc N-Channel MOSFET Transistor RD3P050SN ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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DATA SHEET ZENER DIODES RD2.0S to RD150S ZENER DIODES 200 mW 2-PIN SUPER MINI MOLD DESCRIPTION Type RD2.0S to RD150S series are 2 pin super mini mold

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RD3P050SNFRA 　　Nch 100V 5A Power MOSFET 　　 Datasheet lOutline VDSS 100V 　 RDS(on)(Max.) 190mΩ DPAK ID ±5.0A TO-252 PD 15W 　 　　　　　　 lFe

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RD3L220SN 　　Nch 60V 22A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 26mΩ ±22A 20W lFeatures 1) Low on - resistance 2) Fast switching sp

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isc P-Channel MOSFET Transistor RD3L140SP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤84mΩ(VGS= -10V; ID= -14A) ·Advanced trench process t

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isc N-Channel MOSFET Transistor RD3L080SN FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Re

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isc P-Channel MOSFET Transistor RD3H080SP FEATURES ·Drain Current –ID= -8A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-

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isc P-Channel MOSFET Transistor RD3P130SP FEATURES ·Drain Current –ID= -13A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source O

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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$ $ . . 72 $% $ . $ Features • ST proprietary process • Reduce leakage current • Low forward voltage drop • High frequency operation • ECOPACK®

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DATA SHEET ZENER DIODES RD2.0S to RD150S ZENER DIODES 200 mW 2-PIN SUPER MINI MOLD DESCRIPTION Type RD2.0S to RD150S series are 2 pin super mini mold

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isc N-Channel MOSFET Transistor RD3H200SN FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 45V(Min) ·Static Drain-Source On-R

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isc N-Channel MOSFET Transistor RD3P200SN FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-

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RD3P130SP 　　Pch -100V -13A Power MOSFET 　　 Datasheet lOutline VDSS -100V 　 RDS(on)(Max.) 200mΩ DPAK ID ±13A TO-252 PD 20W 　 　　　　　　 lFe

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$ $ . $ $ .. $$ 3RZHU)/$7Œ[ Features • ST proprietary process • Reduce leakage current • Low forward voltage drop • High frequency operation • ECOP

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