RD3.0S Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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® WON-TOP ELECTRONICS MURD320/S – MURD360/S 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Pb Features  Glass Passivated Die Construction  Id

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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isc P-Channel MOSFET Transistor RD3H160SP FEATURES ·Drain Current –ID= -16A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

(19 views)

® WON-TOP ELECTRONICS MBRD320/S – MBRD3100/S 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Pb Features  Schottky Barrier Chip  Guard Ring Die Cons

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isc N-Channel MOSFET Transistor RD3L220SN FEATURES ·Drain Current –ID= 22A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-R

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Isc N-Channel MOSFET Transistor RD3P050SN ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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isc P-Channel MOSFET Transistor RD3P130SP FEATURES ·Drain Current –ID= -13A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source O

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$ $ . . 72 $% $ . $ Features • ST proprietary process • Reduce leakage current • Low forward voltage drop • High frequency operation • ECOPACK®

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isc N-Channel MOSFET Transistor RD3L080SN FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Re

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FERD30H100S 100 V field-effect rectifier diode Datasheet - production data A K KA K A K A TO-220AB A KA K IPAK KA A DPAK Features  ST advanc

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RD3L220SN 　　Nch 60V 22A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 60V 26mΩ ±22A 20W lFeatures 1) Low on - resistance 2) Fast switching sp

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