RD3G600GN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3G600GN FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-R

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RD3G600GN 　　Nch 40V 60A Power MOSFET 　　 Datasheet lOutline VDSS 40V 　 RDS(on)(Max.) 3.6mΩ DPAK ID ±60A TO-252 PD 40W 　 　　　　　　 lFeature

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