RD3P200SN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3P200SN FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-

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RD3P200SN 　　Nch 100V 20A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 100V 46mΩ ±20A 20W lFeatures 1) Low on - resistance 2) Fast switching

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