RD3T050CN Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor RD3T050CN FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-R

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RD3T050CN 　　Nch 200V 5A Power MOSFET 　　 Datasheet lOutline VDSS 200V 　 RDS(on)(Max.) 760mΩ DPAK ID ±5A TO-252 PD 29W lFeatures 1) Low on

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