isc N-Channel MOSFET Transistor RD3T050CN FEATUR.
RD3T050CN - Power MOSFET
RD3T050CN Nch 200V 5A Power MOSFET Datasheet lOutline VDSS 200V RDS(on)(Max.) 760mΩ DPAK ID ±5A TO-252 PD 29W lFeatures 1) Low on.RD3T050CN - N-Channel MOSFET
isc N-Channel MOSFET Transistor RD3T050CN FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-R.