RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANG.
Sanken electric
RG4Z - Ultra-Fast-Recovery Rectifier Diodes
Ultra-Fast-Recovery om Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) RG 4Y RG 4Z RG 4 RG 4A w RG 4C w IF(AV) .
LGE
RG4Z - High Efficiency Rectifiers
RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANGE: 70--- 1000 V CURRENT: 2.0--- 3.5 A Features Low cost Diffused junction Low leakage Low forward v.
International Rectifier
IRG4ZC70UD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable Ultr.
International Rectifier
IRG4ZH50KD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOF.
International Rectifier
IRG4ZH70UD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable Ult.
International Rectifier
IRG4ZH71KD - Surface Mountable Short Circuit Rated UltraFast IGBT
www.DataSheet4U.com PD - 91729 PRELIMINARY IRG4ZH71KD Surface Mountable Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR WITH.
EIC
RG4Z - ULTRA FAST RECOVERY RECTIFIER DIODE
RG4Z PRV : 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * L.
