RG4Z Datasheet | Specifications & PDF Download

RG4Z PRV : 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * L

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Ultra-Fast-Recovery om Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) RG 4Y RG 4Z RG 4 RG 4A w RG 4C w IF(AV)

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www.DataSheet4U.com PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOF

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www.DataSheet4U.com PD -9.1668A IRG4ZC70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable Ultr

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RG4Y-RG4C High Efficiency Rectifiers VOLTAGE RANGE: 70--- 1000 V CURRENT: 2.0--- 3.5 A Features Low cost Diffused junction Low leakage Low forward v

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www.DataSheet4U.com PD - 91729 PRELIMINARY IRG4ZH71KD Surface Mountable Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR WITH

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www.DataSheet4U.com PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable Ult

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