RJK03P9DPA (Renesas Technology)
Built in SBD Dual N-channel Power MOS FET
Preliminary Datasheet
RJK03P9DPA
MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power
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