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RJK03P9DPA Built in SBD Dual N-channel Power MOS FET

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Description

Preliminary Datasheet RJK03P9DPA MOS1 30 V, 20 A, 7.0 mΩ max.MOS2 30 V, 50 A, 2.2 mΩ max.Built in SBD Dual N-channel Power MOS FET High Speed Power.

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Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and

RJK03P9DPA Distributors

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