* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and
RJK03P7DPA Datasheet (349.47 KB)
RJK03P7DPA
Renesas ↗ Technology
349.47 KB
Dual n-channel power mosfet.
Preliminary Datasheet
RJK03P7DPA
MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power.
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