RJK03P7DPA Dual N-Channel Power MOSFET

Renesas Technology

RJK03P7DPA Description

Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max.MOS2 30 V, 30 A, 5.3 mΩ max.Built in SBD Dual N-channel Power MOS FET High Speed Power.

RJK03P7DPA Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and

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Datasheet Details

Part number: RJK03P7DPA
Manufacturer: Renesas ↗ Technology
File Size: 349.47 KB
Datasheet: RJK03P7DPA-RenesasTechnology.pdf
Description: Dual N-Channel Power MOSFET

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Dual N-Channel Power MOSFET Renesas Technology

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