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RJK03A04DPA

Silicon N Channel Power MOS FET

RJK03A04DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8

RJK03A04DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03A04DPA Datasheet (103.67 KB)

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Datasheet Details

Part number:

RJK03A04DPA

Manufacturer:

Renesas ↗

File Size:

103.67 KB

Description:

Silicon n channel power mos fet.
Preliminary Datasheet RJK03A04DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0210 Power Switching Rev.2.10 May 13, 2010 .

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RJK03A04DPA Silicon Channel Power MOS FET Renesas

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