RJK03A04DPA - Silicon N Channel Power MOS FET
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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJK03A04DPA Features
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8
