RJK03A4DPA

Silicon N Channel Power MOS FET

Renesas

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK)

RJK03A4DPA

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Silicon n channel power mos fet.

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RJK03A4DPA Silicon Channel Power MOS FET Renesas

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