RJK03A4DPA - Silicon N Channel Power MOS FET
RJK03A4DPA Features
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
