RJK0301DPB - Silicon N Channel Power MOS FET Power Switching
RJK0301DPB Features
* High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate
