RJK0329DPB Datasheet - Renesas Technology

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RJK0329DPB Silicon N Channel Power MOS FET Power Switching

www.DataSheet4U.com RJK0329DPB Silicon N Channel Power MOS FET Power Switching REJ03G1638-0400 Rev.4.00 Apr 10, 2008 .

RJK0329DPB_RenesasTechnology.pdf

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Datasheet Details

Part number:

RJK0329DPB

Manufacturer:

Renesas ↗ Technology

File Size:

154.14 KB

Description:

Silicon N Channel Power MOS FET Power Switching

Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V)
* Pb-free
* Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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RJK0329DPB Silicon Channel Power MOS FET Power Switching Renesas Technology

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