RLF Datasheet | Specifications & PDF Download

Wireless Coil Rx HA220-15100RLF Features: • Operating temperature range -40°C to +125°C • Rx : 11 ~ 17µH inductance with 1.0Ω DCR, Ø14.5mm at 1.2mm th

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Integrated Circuit Systems, Inc. ICS83115 LOW SKEW, 1-TO-16 LVCMOS / LVTTL FANOUT BUFFER FEATURES • 16 LVCMOS/LVTTL outputs • 1 LVCMOS/LVTTL clock in

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( DataSheet : www.DataSheet4U.com ) (1/2) 001-01 / 20011102 / e532_rlf12560.fm Inductors For Power Line SMD Accompaning large current power supplies

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SPLIT TYPE ROOM AIR CONDITIONER WALL MOUNTED TYPE Indoor unit ASU9RLF ASU12RLF ASU15RLS Outdoor unit AOU9RLFW AOU12RLFW AOU15RLS CONTENTS SPECIFICA

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PD-90639C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-39) Product Summary Part Number BVDSS IRLF120 100V RDS(on) 0.35Ω

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INDUCTORS Inductors for power circuits Wound ferrite RLF series RoHS Cl Br REACH Halogen SVHC-Free Free Pb Lead Free RLF7030 type FEATURES Magneti

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Standard Products RLF7045-D TYPE Automotive Target SMD Power Inductor Component Image & Dimension LEAD Free Features : a) Miniature Size : Mou

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www.DataSheet4U.com Large Can Aluminum Electrolytic Capacitors FEATURES • LOW PROFILE (20mm HEIGHT) • LOW DISSIPATION FACTOR AND LOW ESR • HIGH RIPPL

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SPLIT TYPE ROOM AIR CONDITIONER WALL MOUNTED TYPE Indoor unit ASU9RLF ASU12RLF ASU15RLS Outdoor unit AOU9RLFW AOU12RLFW AOU15RLS CONTENTS SPECIFICA

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Provisional Data Sheet No. PD-9.1614 HEXFET® TRANSISTOR IRLF230 N-CHANNEL 200Volt, 0.40 Ω, HEXFET The Logic Level ‘L’ series of power MOSFETs are d

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HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.)  Lower RDS(ON) : 10

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HRLF120N10H Jan 2016 HRLF120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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www.DataSheet4U.com Large Can Aluminum Electrolytic Capacitors FEATURES • LOW PROFILE (20mm HEIGHT) • EXTENDED TEMPERATURE RATING +105°C • LOW DISSIP

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HRLF85N10H Dec 2016 HRLF85N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabili

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HRLF29N045H Dec 2016 HRLF29N045H 45V N-Channel Trench MOSFET Features  Optimized for High Speed Switching, Logic Level  Enhanced Body diode dv/dt

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HRLF150N10K Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 50 A ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Lower R

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HRLF180N10K Jan 2016 HRLF180N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 40 A ‰ Unrivalled Gate Charge : 94 nC (Typ.) ‰ Lower R

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HRLF33N03K Jan 2016 HRLF33N03K 30V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 30 V ‰ ID = 85 A ‰ Unrivalled Gate Charge : 110 nC (Typ.) ‰ Lower RDS(

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HRLF55N03K Jan 2016 HRLF55N03K 30V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 30 V ‰ ID = 65 A ‰ Unrivalled Gate Charge : 50 nC (Typ.) ‰ Lower RDS(O

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HRLF80N06K Jan 2016 HRLF80N06K 60V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 60 V ‰ ID = 70 A ‰ Unrivalled Gate Charge : 100 nC (Typ.) ‰ Lower RDS(

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