RQJ0203WGDQA Datasheet | Specifications & PDF Download

RQJ0203WGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ID = –1.1 A) • Low drive curre

Rating: 1 ★ (3 votes)