RQJ0203WGDQA Datasheet - Renesas

RQJ0203WGDQA, Silicon P-Channel MOS FET

RQJ0203WGDQA Silicon P Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

Features

* Low on-resistance RDS(on) = 142 mΩ typ (VGS =
* 4.5 V, ID =
* 1.1 A)
* Low drive current
* High speed switching
* 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG”. Preliminary Datasheet R07DS

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

RQJ0203WGDQA-Renesas.pdf