RQJ0203WGDQA Silicon P-Channel MOS FET

Renesas

Description

RQJ0203WGDQA Silicon P Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RQJ0203WGDQA
Manufacturer: Renesas ↗
File Size: 123.25 KB
Datasheet: RQJ0203WGDQA-Renesas.pdf
Description: Silicon P-Channel MOS FET

Features

* Low on-resistance RDS(on) = 142 mΩ typ (VGS =
* 4.5 V, ID =
* 1.1 A)
* Low drive current
* High speed switching
* 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG”. Preliminary Datasheet R07DS

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RQJ0203WGDQA Silicon P-Channel MOS FET Renesas

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