RQJ0201UGDQA Datasheet - Renesas

RQJ0201UGDQA, Silicon P-Channel MOS FET

RQJ0201UGDQA Silicon P Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

Features

* Low on-resistance RDS(on) = 53 mΩ typ (VGS =
* 4.5 V, ID =
* 1.8 A)
* Low drive current
* High speed switching
* 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “UG”. Preliminary Datasheet R07DS0

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

RQJ0201UGDQA-Renesas.pdf