RQJ0302NGDQA Datasheet - Renesas

RQJ0302NGDQA, Silicon P-Channel MOS FET

RQJ0302NGDQA Silicon P Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

Features

* Low on-resistance RDS(on) = 138 mΩ typ (VGS =
* 10 V, ID =
* 1.1 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG”. Preliminary Datasheet R07DS0

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

RQJ0302NGDQA-Renesas.pdf