RQJ0301HGDQS Datasheet - Renesas

RQJ0301HGDQS, Silicon P-Channel MOS FET

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching .

Features

* Low on-resistance RDS(on) = 38 m Ω typ (VGS =
* 10 V, ID =
* 2.6 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “HG”. REJ03G1265-0300 Rev.3.0

RQJ0301HGDQS-Renesas.pdf