RQJ0303PGDQA

Silicon P Channel MOS FET

Renesas

RQJ0303PGDQA Features

* Low on-resistance RDS(on) = 54 mΩ typ (VGS =

* 10 V, ID =

* 1.6 A)

* Low drive current

* High speed switching

* 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1 2 S 1 2 1.

RQJ0303PGDQA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RQJ0303PGDQA Datasheet (182.22 KB)