
RQJ0302NGDQA - Silicon P-Channel MOS FET
RQJ0302NGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A)
• Low drive curren
(8 views)
RQJ0302NGDQA Silicon P Channel MOS FET Power Switc.
RQJ0302NGDQA Distributor