RQJ0601DGDQS (Renesas)
Silicon P-Channel MOS FET
RQJ0601DGDQS
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
• Low drive curren
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RQJ0601DGDQS Silicon P Channel MOS FET Power Switc.
Silicon P-Channel MOS FET
RQJ0601DGDQS Distributor
