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RQJ0601DGDQS Datasheet - Renesas

RQJ0601DGDQS Silicon P-Channel MOS FET

RQJ0601DGDQS Features

* Low on-resistance RDS(on) = 124 mΩ typ (VGS =

* 10 V, ID =

* 1.4 A)

* Low drive current

* High speed switching

* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”. REJ03G1266-0300 Rev.3.0

RQJ0601DGDQS-Renesas.pdf

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Datasheet Details

Part number:

RQJ0601DGDQS

Manufacturer:

Renesas ↗

File Size:

74.88 KB

Description:

Silicon p-channel mos fet.

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