RQJ0601DGDQS

Silicon P-Channel MOS FET

Renesas

* Low on-resistance RDS(on) = 124 mΩ typ (VGS =

* 10 V, ID =

* 1.4 A)

* Low drive current

* High speed switching

* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”. REJ03G1266-0300 Rev.3.0

RQJ0601DGDQS

74.88 KB

Silicon p-channel mos fet.

📁 Related Datasheet

RQJ0602EGDQA Silicon P-Channel MOS FET (Renesas)

RQJ0602EGDQS Silicon P-Channel MOS FET (Renesas)

RQJ0603LGDQA Silicon P Channel MOS FET Power Switching (Renesas)

RQJ0603LGDQA Silicon P-Channel MOS FET (Renesas)

RQJ0201UGDQA Silicon P-Channel MOS FET (Renesas)

RQJ0202VGDQA Silicon P Channel MOS FET Power Switching (Renesas)

RQJ0202VGDQATL-E P-Channel 20V MOSFET (VBsemi)

RQJ0203WGDQA Silicon P-Channel MOS FET (Renesas)

RQJ0204XGDQA Silicon P-Channel MOS FET (Renesas)

RQJ0301HGDQS Silicon P-Channel MOS FET (Renesas)

TAGS

RQJ0601DGDQS Silicon P-Channel MOS FET Renesas

Image Gallery