RQJ0602EGDQA

Silicon P-Channel MOS FET

Renesas

RQJ0602EGDQA Features

* Low on-resistance RDS(on) = 490 mΩ typ (VGS =

* 10 V, ID =

* 0.55 A)

* Low drive current

* High speed switching

* 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “EG”. Preliminary Datasheet R07DS

RQJ0602EGDQA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RQJ0602EGDQA Datasheet (120.58 KB)