RQJ0603LGDQA Silicon P Channel MOS FET Power Switching

Renesas

RQJ0603LGDQA Description

RQJ0603LGDQA Silicon P Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RQJ0603LGDQA Features

* Low on-resistance RDS(on) = 158 mΩ typ (VGS =
* 10 V, ID =
* 0.9 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “LG”. Preliminary Datasheet R07DS0

RQJ0603LGDQA Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RQJ0603LGDQA Datasheet Preview — Preview of RQJ0603LGDQA PDF

Datasheet Details

Part number: RQJ0603LGDQA
Manufacturer: Renesas ↗
File Size: 125.25 KB
Datasheet: RQJ0603LGDQA-Renesas.pdf
Description: Silicon P Channel MOS FET Power Switching

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Silicon Channel MOS FET Power Switching Renesas

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