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RQJ0602EGDQS Datasheet - Renesas

RQJ0602EGDQS Silicon P-Channel MOS FET

RQJ0602EGDQS Features

* Low on-resistance RDS(on) = 485 mΩ typ (VGS =

* 10 V, ID =

* 0.75 A)

* Low drive current

* High speed switching

* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “EG”. REJ03G1268-0300 Rev.3.

RQJ0602EGDQS-Renesas.pdf

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Datasheet Details

Part number:

RQJ0602EGDQS

Manufacturer:

Renesas ↗

File Size:

78.51 KB

Description:

Silicon p-channel mos fet.

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