RQJ0602EGDQS Silicon P-Channel MOS FET

Renesas

RQJ0602EGDQS Description

RQJ0602EGDQS Silicon P Channel MOS FET Power Switching .

RQJ0602EGDQS Features

* Low on-resistance RDS(on) = 485 mΩ typ (VGS =
* 10 V, ID =
* 0.75 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “EG”. REJ03G1268-0300 Rev.3.

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Datasheet Details

Part number: RQJ0602EGDQS
Manufacturer: Renesas ↗
File Size: 78.51 KB
Datasheet: RQJ0602EGDQS-Renesas.pdf
Description: Silicon P-Channel MOS FET

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Silicon P-Channel MOS FET Renesas

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