RQK0608BQDQS (Renesas)
N-Channel MOSFET
RQK0608BQDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A)
• Low drive cur
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RQK0608BQDQS Silicon N Channel MOS FET Power Switc.
N-Channel MOSFET
RQK0608BQDQS Distributor
