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RQK0608BQDQS N-Channel MOSFET

RQK0608BQDQS Description

RQK0608BQDQS Silicon N Channel MOS FET Power Switching .

RQK0608BQDQS Features

* Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 4.5 V, ID = 1.6 A)
* Low drive current
* High speed switching
* VDSS : 60 V and capable of 2.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Note: Marking is “BQ“. REJ03

RQK0608BQDQS Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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N-Channel MOSFET Renesas
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