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RQK0606KGDQA Silicon N Channel MOS FET Power Switching

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Description

www.DataSheet4U.com RQK0606KGDQA Silicon N Channel MOS FET Power Switching REJ03G1497-0100 Rev.1.00 Jan 15, 2007 .

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Features

* Low on-resistance RDS(on) = 173 mΩ typ. (at VGS = 4.5 V, ID = 0.8 A)
* Low drive current
* High speed switching
* VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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