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RQK0605JGDQA N-Channel MOSFET

RQK0605JGDQA Description

RQK0605JGDQA Silicon N Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RQK0605JGDQA Features

* Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)
* Low drive current
* High speed switching
* 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “JG”. Preliminary Datasheet R07DS0309EJ0500 (Previous: REJ03G1278-040

RQK0605JGDQA Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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N-Channel MOSFET Renesas
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