RQK0604IGDQA Datasheet - Renesas Technology

RQK0604IGDQA, Silicon N-Channel MOSFET

RQK0604IGDQA Silicon N Channel MOS FET Power Switching

Features

* Low on-resistance RDS(on) = 111 mΩ typ.
(at VGS = 4.5 V, ID = 1 A)
* Low drive current
* High speed switching
* VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “IG“.
Preliminary Datas

RQK0604IGDQA_RenesasTechnology.pdf