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RQK0604IGDQA Silicon N-Channel MOSFET

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Description

RQK0604IGDQA Silicon N Channel MOS FET Power Switching .

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Features

* Low on-resistance RDS(on) = 111 mΩ typ. (at VGS = 4.5 V, ID = 1 A)
* Low drive current
* High speed switching
* VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “IG“. Preliminary Datas

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RQK0604IGDQA Silicon N-Channel MOSFET Renesas Technology
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