
RU1H60R - N-Channel Advanced Power MOSFET
RU1H60R
N-Channel Advanced Power MOSFET
Features
• 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell D
Rating:
1
★
(2 votes)