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RU1H60R

N-Channel Advanced Power MOSFET

RU1H60R Features

* 100V/60A, RDS (ON) =17 mΩ(Typ.)@VGS=10V RDS (ON) =18.5 mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Switching Applications

RU1H60R General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU1H60R Datasheet (333.61 KB)

Preview of RU1H60R PDF

Datasheet Details

Part number:

RU1H60R

Manufacturer:

Ruichips

File Size:

333.61 KB

Description:

N-channel advanced power mosfet.

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RU1H60R N-Channel Advanced Power MOSFET Ruichips

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