RU1H100 - N-Channel Advanced Power MOSFET
TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Curren
RU1H100 Features
* 100V/75A RDS (ON)=11mΩ(Typ.) @ VGS=10V
* Ultra Low On-Resistance
* Extremely high dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested Applications
* High Speed Power Switching
* Uninterruptible Power Supply Pin Descript
