RU1H100 - N-Channel Advanced Power MOSFET

Ruichips

The RU1H100 by Ruichips is a N-Channel Advanced Power MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

RU1H100 N-Channel Advanced Power MOSFET by Ruichips - Datasheet Preview — Official preview page of the **RU1H100** N-Channel Advanced Power MOSFET datasheet (Ruichips).

Datasheet Details

Part number	RU1H100
Manufacturer	Ruichips
File Size	440.44 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H100-Ruichips.pdf
Additional preview pages of the RU1H100 datasheet.

RU1H100 Product details

Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction

Features

100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Extremely high dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.

📁 RU1H100 Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

Other Datasheets by Ruichips

RU1H100R - N-Channel Advanced Power MOSFET
RU1H130Q - N-Channel Advanced Power MOSFET
RU1H130R - N-Channel Advanced Power MOSFET
RU1H130S - N-Channel Advanced Power MOSFET
RU1H150R - N-Channel Advanced Power MOSFET
RU1H190R - N-Channel Advanced Power MOSFET

Published: Apr 25, 2016 |