RU1890H04
Samsung
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Rf module.
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RU1890H04CAA - RF Module
(Samsung)
RF Module - Digital Module -
RF Module - Digital Module
■ INTRODUCTION
SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.
RU1890H04CDA - RF Module
(Samsung)
RF Module - Digital Module -
RF Module - Digital Module
■ INTRODUCTION
SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.
RU1890B04 - RF Module
(Samsung)
RF Module - Digital Module -
RF Module - Digital Module
■ INTRODUCTION
SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.
RU1890B04GCA - RF Module
(Samsung)
RF Module - Digital Module -
RF Module - Digital Module
■ INTRODUCTION
SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.
RU1890B04UAA - RF Module
(Samsung)
RF Module - Digital Module -
RF Module - Digital Module
■ INTRODUCTION
SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.
RU1 - Fast-Recovery Rectifier Diodes
(Sanken electric)
Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electri.
RU1 - FAST RECOVERY RECTIFIER DIODES
(EIC)
.eicsemi.
RU1 - RU1B
PRV : 400 - 800 Volts Io : 0.25 Ampere
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
FAST RECOVERY RECTIFIER DIODES
D.
RU1088R - N-Channel Advanced Power MOSFET
(Ruichips)
RU1088R
N-Channel Advanced Power MOSFET
Features
• 100V/80A RDS (ON)=10mΩ(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• .
RU120N15Q - N-Channel Advanced Power MOSFET
(Ruichips)
RU120N15Q
N-Channel Advanced Power MOSFET
Features
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and G.
RU120N15R - N-Channel Advanced Power MOSFET
(Ruichips)
RU120N15R
N-Channel Advanced Power MOSFET
Features
· 150V/120A
RDS (ON)=15mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and G.
