RU120N15Q - N-Channel Advanced Power MOSFET

Ruichips

RU120N15Q Datasheet Preview — Preview of RU120N15Q PDF

Datasheet Details

Part number	RU120N15Q
Manufacturer	Ruichips
File Size	315.55 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU120N15Q-Ruichips.pdf

RU120N15Q Product details

Description

TO-247 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy ,Single Pulsed N-

Features

150V/120A RDS (ON)=15mΩ(Typ. ) @ VGS=10V.
Avalanche Rated.
Reliable and Rugged.
Lead Free and Green Devices Available.

📁 RU120N15Q Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

Other Datasheets by Ruichips

RU120N15R - N-Channel Advanced Power MOSFET
RU12200R - N-Channel Advanced Power MOSFET
RU1088R - N-Channel Advanced Power MOSFET
RU140N10R - N-Channel Advanced Power MOSFET
RU16P8M4 - P-Channel Advanced Power MOSFET
RU190N08 - N-Channel Advanced Power MOSFET

Published: Apr 10, 2017 |