RU12200R - N-Channel Advanced Power MOSFET

Ruichips

RU12200R Datasheet Preview — Preview of RU12200R PDF

Datasheet Details

Part number	RU12200R
Manufacturer	Ruichips
File Size	440.45 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU12200R-Ruichips.pdf

RU12200R Product details

Description

GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source

Features

120V/200A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V.
Reliable and Rugged.
Ultra Low On-Resistance.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 10, 2017 |