RU12200R Datasheet, Mosfet, Ruichips

RU12200R Features

• Mosfet
• 120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V
• Reliable and Rugged
• Ultra Low On-Resistance
• 100% avalanche tested
• 175°C Operating Temperature

PDF File Details

Part number:

RU12200R

Manufacturer:

Ruichips

File Size:

440.45kb

Download:

📄 Datasheet

Description:

N-channel advanced power mosfet. GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS

RU12200R Application

• Applications
• Uninterruptible Power Supplies
• Synchronus Rectification in DC/DC and AC/DC Converters Pin Description GDS TO220

TAGS

RU12200R

Ruichips

📁 Related Datasheet

RU120N15Q - N-Channel Advanced Power MOSFET (Ruichips)
RU120N15Q N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and G.

RU120N15R - N-Channel Advanced Power MOSFET (Ruichips)
RU120N15R N-Channel Advanced Power MOSFET Features · 150V/120A RDS (ON)=15mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and G.

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Electri.

RU1 - FAST RECOVERY RECTIFIER DIODES (EIC)
.eicsemi. RU1 - RU1B PRV : 400 - 800 Volts Io : 0.25 Ampere TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES D.

RU1088R - N-Channel Advanced Power MOSFET (Ruichips)
RU1088R N-Channel Advanced Power MOSFET Features • 100V/80A RDS (ON)=10mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • .

RU140N10R - N-Channel Advanced Power MOSFET (Ruichips)
RU140N10R N-Channel Advanced Power MOSFET Features • 100V/140A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Swit.

RU16P8M4 - P-Channel Advanced Power MOSFET (Ruichips)
RU16P8M4 P-Channel Advanced Power MOSFET Features • -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V • Super High Dense Cell D.

RU1890B04 - RF Module (Samsung)
RF Module - Digital Module - RF Module - Digital Module ■ INTRODUCTION SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.

RU1890B04GCA - RF Module (Samsung)
RF Module - Digital Module - RF Module - Digital Module ■ INTRODUCTION SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.

RU1890B04UAA - RF Module (Samsung)
RF Module - Digital Module - RF Module - Digital Module ■ INTRODUCTION SAMSUNG Electro-mechanics has two kinds of Digital RF Modules ; 2.4GHz, DECT 2.