RU12200R Datasheet - Ruichips

RU12200R - N-Channel Advanced Power MOSFET

GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 30.

RU12200R Features

* 120V/200A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V

* Reliable and Rugged

* Ultra Low On-Resistance

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Uninterruptible Power Suppl

RU12200R-Ruichips.pdf