RU16P8M4 Datasheet - Ruichips

RU16P8M4 P-Channel Advanced Power MOSFET

G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted.

RU16P8M4 Features

* -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V

* Super High Dense Cell Design

* Fast Switching Speed

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Load Swtich

* Battery

RU16P8M4-Ruichips.pdf

RU16P8M4 Datasheet Preview — Preview of RU16P8M4 PDF

Datasheet Details

Part number:

RU16P8M4

Manufacturer:

Ruichips

File Size:

292.86 KB

Description:

P-channel advanced power mosfet.

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