RU16P8M4 - P-Channel Advanced Power MOSFET

Ruichips

RU16P8M4 Datasheet Preview — Preview of RU16P8M4 PDF

Datasheet Details

Part number	RU16P8M4
Manufacturer	Ruichips
File Size	292.86 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU16P8M4-Ruichips.pdf

RU16P8M4 Product details

Description

G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ID② Continuous Drain Current@TA(VGS=-4.5V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissip

Features

-16V/-8A, RDS (ON) =40mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-2.5V.
Super High Dense Cell Design.
Fast Switching Speed.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |