RU1H130Q Datasheet - Ruichips

RU1H130Q N-Channel Advanced Power MOSFET

G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I.

RU1H130Q Features

* 100V/130A, RDS (ON) =7mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* High Efficiency Synchronous Rectification in SMPS

RU1H130Q-Ruichips.pdf