RU1H130Q - N-Channel Advanced Power MOSFET
G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I
RU1H130Q Features
* 100V/130A, RDS (ON) =7mΩ(Typ.)@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* High Efficiency Synchronous Rectification in SMPS
