RU1H130Q N-Channel Advanced Power MOSFET

Ruichips

RU1H130Q Description

RU1H130Q N-Channel Advanced Power MOSFET .
G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

RU1H130Q Features

* 100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested

RU1H130Q Applications

* High Efficiency Synchronous Rectification in SMPS

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Datasheet Details

Part number: RU1H130Q
Manufacturer: Ruichips
File Size: 277.55 KB
Datasheet: RU1H130Q-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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