RU1H150R - N-Channel Advanced Power MOSFET
RU1H150R Features
* 100V/150A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V
* Advanced SGT MOSFET Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Compliant)
